Silicon carbide (SiC) is one of the candidates for future metal-oxide-semiconductor (MOS) devices, in particular for high power applications. One main reason for the interest in SiC is that it comes with its own native dielectric, silicon dioxide (SiO₂). However, devices made from SiC still struggle to achieve the high quality SiC/SiO₂ interfaces necessary for optimum device performance and stability.

We have worked together with colleagues from Infineon Technologies Austria and KAI to explore this buried interface using X-ray photoelectron spectroscopy (XPS) to systematically study the local elemental distributions and chemical environment. We compared a range of device stacks after varying nitridation treatments, which can help lower interface defects and improve electrical device behaviour.

If you want to know more about this exciting exploration of an interface using X-ray spectroscopy head to the Journal of Materials Chemistry C to check out our recent paper. It was published as part of the 2018 Journal of Materials Chemistry C Emerging Investigators themed collection. Do check out the collection as it contains a number of great papers from exciting young materials chemists.